RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

Shih Cheng Yang; Hsien Chin Chiu; Feng Tso Chien; Yi Jen Chan; Jenn Ming Kuo

doi:10.1109/55.915602

RIE gate-recessed (Al _0.3 Ga _0.7) _0.5In _0.5 P/InGaAs double doped-channel FETs using CHF ₃+ BCl ₃ mixing plasma

Shih Cheng Yang^*
, Hsien Chin Chiu
, Feng Tso Chien
, Yi Jen Chan
, Jenn Ming Kuo

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

BCl ₃+ CHF ₃ gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al _0.3 Ga _0.7) _0.5 In _0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V _th was achieved. With the merits of this wide bandgap (Al _0.3 Ga _0.7) _0.5 In _0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.

原文	英語
頁（從 - 到）	170-172
頁數	3
期刊	IEEE Electron Device Letters
卷	22
發行號	4
DOIs	https://doi.org/10.1109/55.915602
出版狀態	已出版 - 04 2001
對外發佈	是

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@article{c63bdd4dc6124ba9a8f7bf43ae848a87,

title = "RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma",

abstract = "BCl 3+ CHF 3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al 0.3 Ga 0.7) 0.5 In 0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V th was achieved. With the merits of this wide bandgap (Al 0.3 Ga 0.7) 0.5 In 0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.",

keywords = "AlGaInP/InGaAs, Heterostructure FETs, Reactive-ion-etching",

author = "Yang, \{Shih Cheng\} and Chiu, \{Hsien Chin\} and Chien, \{Feng Tso\} and Chan, \{Yi Jen\} and Kuo, \{Jenn Ming\}",

year = "2001",

month = apr,

doi = "10.1109/55.915602",

language = "英语",

volume = "22",

pages = "170--172",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

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T1 - RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

AU - Yang, Shih Cheng

AU - Chiu, Hsien Chin

AU - Chien, Feng Tso

AU - Chan, Yi Jen

AU - Kuo, Jenn Ming

PY - 2001/4

Y1 - 2001/4

N2 - BCl 3+ CHF 3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al 0.3 Ga 0.7) 0.5 In 0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V th was achieved. With the merits of this wide bandgap (Al 0.3 Ga 0.7) 0.5 In 0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.

AB - BCl 3+ CHF 3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al 0.3 Ga 0.7) 0.5 In 0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V th was achieved. With the merits of this wide bandgap (Al 0.3 Ga 0.7) 0.5 In 0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.

KW - AlGaInP/InGaAs

KW - Heterostructure FETs

KW - Reactive-ion-etching

UR - https://www.scopus.com/pages/publications/0035307820

U2 - 10.1109/55.915602

DO - 10.1109/55.915602

M3 - 文章

AN - SCOPUS:0035307820

SN - 0741-3106

VL - 22

SP - 170

EP - 172

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

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RIE gate-recessed (Al _0.3 Ga _0.7) _0.5In _0.5 P/InGaAs double doped-channel FETs using CHF ₃+ BCl ₃ mixing plasma