@inproceedings{3cd4fc064a3349938bde38b0cd1486dc,
title = "Robust nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory",
abstract = "In this paper, we demonstrate gadolinium oxide RRAM with nitrogen plasma immersion ion implantation (PIII) treatment technique at first time. For nitrogen plasma treatment, the nitrogen ions were incorporated with gadolinium oxide. We controlled the implantation voltage that the nitrogen ions exist near the surface of gadolinium oxide and it was forming a GdxO yNz layer. This can reduce the leakage current to reach a low current and power consumption operation. In addition, the retention and endurance characteristics were also improved.",
keywords = "RRAM, gadolinium, nitrogen plasma, oxynitride, plasma immersion ion implantation",
author = "Ye, {Yu Ren} and Wu, {Ying Huei} and Wang, {Jer Chyi} and Lai, {Chao Sung}",
year = "2013",
doi = "10.1109/INEC.2013.6466029",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "300--302",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}