Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-μm-wide and 500-μm long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm ², which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.