Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Pi Chun Juan; Jyh Liang Wang; Tsang Yen Hsieh; Cheng Li Lin; Chia Ming Yang; Der Chi Shye; Shu Chuan Liao

doi:10.1016/j.mee.2015.01.026

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Pi Chun Juan^*
, Jyh Liang Wang
, Tsang Yen Hsieh
, Cheng Li Lin
, Chia Ming Yang
, Der Chi Shye
, Shu Chuan Liao

^*此作品的通信作者

光電工程研究所(碩士班)

Ming Chi University of Technology
Feng Chia University

研究成果: 期刊稿件 › 文章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

原文	英語
頁（從 - 到）	27-30
頁數	4
期刊	Microelectronic Engineering
卷	138
DOIs	https://doi.org/10.1016/j.mee.2015.01.026
出版狀態	已出版 - 20 04 2015

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Publisher Copyright:
© 2015 Published by Elsevier Inc.

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10.1016/j.mee.2015.01.026

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引用此

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title = "Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories",

abstract = "TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.",

keywords = "Nanocrystal, Nonvolatile memory, ZrLaO high-κ",

author = "Juan, \{Pi Chun\} and Wang, \{Jyh Liang\} and Hsieh, \{Tsang Yen\} and Lin, \{Cheng Li\} and Yang, \{Chia Ming\} and Shye, \{Der Chi\} and Liao, \{Shu Chuan\}",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier Inc.",

year = "2015",

month = apr,

day = "20",

doi = "10.1016/j.mee.2015.01.026",

language = "英语",

volume = "138",

pages = "27--30",

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TY - JOUR

T1 - Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

AU - Juan, Pi Chun

AU - Wang, Jyh Liang

AU - Hsieh, Tsang Yen

AU - Lin, Cheng Li

AU - Yang, Chia Ming

AU - Shye, Der Chi

AU - Liao, Shu Chuan

PY - 2015/4/20

Y1 - 2015/4/20

N2 - TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

AB - TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

KW - Nanocrystal

KW - Nonvolatile memory

KW - ZrLaO high-κ

UR - https://www.scopus.com/pages/publications/84922442251

U2 - 10.1016/j.mee.2015.01.026

DO - 10.1016/j.mee.2015.01.026

M3 - 文章

AN - SCOPUS:84922442251

SN - 0167-9317

VL - 138

SP - 27

EP - 30

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

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