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SERS hotspots growth by mild annealing on Au film over nanospheres, a natural lithography approach
A. Purwidyantri, C. H. Hsu, B. A. Prabowo,
C. M. Yang
, C. S. Lai
光電工程研究所(碩士班)
電子工程學系(含學碩博士班)
Indonesian Institute of Sciences
Chang Gung University
Chang Gung Memorial Hospital
Ming Chi University of Technology
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引文 斯高帕斯(Scopus)
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Physics
Growth
100%
Annealing
100%
Lithography
100%
Raman Spectra
100%
Substrates
50%
Polystyrene
50%
Detection
33%
Electromagnetic Fields
33%
Value
16%
Output
16%
Temperature
16%
Area
16%
Scanning Electron Microscopy
16%
Surface Roughness
16%
Calculation
16%
Finite Difference Time Domain Method
16%
Engineering
Surfaces
100%
Scattering
100%
Rapid Thermal Annealing
85%
Substrates
42%
Fields
28%
Temperature
14%
Roughness
14%
Detection
14%
Nanoparticles
14%
Output Signal
14%
Atomic Force Microscope
14%
Enhancement Factor
14%
Annealing Process
14%
Structural Damage
14%
Hotspot Area
14%
Time Domain Processing
14%
Chemistry
Rapid Thermal Annealing
100%
Liquid Film
100%
Surface-Enhanced Raman Spectroscopy
100%
Procedure
33%
Electromagnetic Field
33%
Surface
16%
Reaction Temperature
16%
Scanning Electron Microscopy
16%
Time
16%
Nanoparticle
16%
Force
16%
Intrathoracic
16%
Surface Roughness
16%
Material Science
Annealing
100%
Film
100%
Nanospheres
100%
Polystyrene
50%
Temperature
16%
Characterization
16%
Surface
16%
Scanning Electron Microscopy
16%
Surface Roughness
16%
Indium Tin Oxide
16%
Finite Difference
16%
Chemical Engineering
Lithography
100%
Polystyrene
50%
Temperature
16%