Structural and electrical characteristics of high-κ Sm2TiO5 gate dielectrics for InGaZnO thin-film transistors

Fa Hsyang Chen; Ching Hung Chen; Tung Ming Pan

doi:10.1109/TDEI.2015.7116319

Structural and electrical characteristics of high-κ Sm₂TiO₅ gate dielectrics for InGaZnO thin-film transistors

Fa Hsyang Chen
, Ching Hung Chen
, Tung Ming Pan

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 期刊稿件 › 文章 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm₂TiO₅ gate dielectrics. The high-κ Sm₂TiO₅ α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high I_on/off ratio of 5.27×10⁷, a high field-effect mobility of 27.8 cm²/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm₂O₃ film, resulting in the formation of good Sm₂TiO₅ gate dielectric and low density of interface states at the oxide/channel interface.

原文	英語
文章編號	7116319
頁（從 - 到）	1337-1342
頁數	6
期刊	IEEE Transactions on Dielectrics and Electrical Insulation
卷	22
發行號	3
DOIs	https://doi.org/10.1109/TDEI.2015.7116319
出版狀態	已出版 - 01 06 2015

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10.1109/TDEI.2015.7116319

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引用此

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title = "Structural and electrical characteristics of high-κ Sm2TiO5 gate dielectrics for InGaZnO thin-film transistors",

abstract = "In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27{\texttimes}107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.",

keywords = "Amorphous indium-gallium-zinc oxide (α-IGZO), Gate dielectric, SmTiO, Thin-film transistor (TFT)",

author = "Chen, \{Fa Hsyang\} and Chen, \{Ching Hung\} and Pan, \{Tung Ming\}",

year = "2015",

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doi = "10.1109/TDEI.2015.7116319",

language = "英语",

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T1 - Structural and electrical characteristics of high-κ Sm2TiO5 gate dielectrics for InGaZnO thin-film transistors

AU - Chen, Fa Hsyang

AU - Chen, Ching Hung

AU - Pan, Tung Ming

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27×107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.

AB - In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27×107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.

KW - Amorphous indium-gallium-zinc oxide (α-IGZO)

KW - Gate dielectric

KW - SmTiO

KW - Thin-film transistor (TFT)

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DO - 10.1109/TDEI.2015.7116319

M3 - 文章

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EP - 1342

JO - IEEE Transactions on Dielectrics and Electrical Insulation

JF - IEEE Transactions on Dielectrics and Electrical Insulation

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ER -

Structural and electrical characteristics of high-κ Sm2TiO5 gate dielectrics for InGaZnO thin-film transistors

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Structural and electrical characteristics of high-κ Sm₂TiO₅ gate dielectrics for InGaZnO thin-film transistors