Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers

R. Mahapatra; S. Maikap; Je Hun Lee; G. S. Kar; A. Dhar; Kim Doh-Y. Kim; D. Bhattacharya; S. K. Ray

doi:10.1116/1.1603279

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers

R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, Kim Doh-Y. Kim, D. Bhattacharya, S. K. Ray^*

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The structural characteristics of ZrO₂ films deposited on strain compensated Si_0.69Ge_0.3C_0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

原文	英語
頁（從 - 到）	1758-1764
頁數	7
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	21
發行號	5
DOIs	https://doi.org/10.1116/1.1603279
出版狀態	已出版 - 09 2003
對外發佈	是

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Mahapatra, R., Maikap, S., Lee, J. H., Kar, G. S., Dhar, A., Doh-Y. Kim, K., Bhattacharya, D., & Ray, S. K. (2003). Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(5), 1758-1764. https://doi.org/10.1116/1.1603279

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abstract = "The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.",

author = "R. Mahapatra and S. Maikap and Lee, {Je Hun} and Kar, {G. S.} and A. Dhar and {Doh-Y. Kim}, Kim and D. Bhattacharya and Ray, {S. K.}",

year = "2003",

month = sep,

doi = "10.1116/1.1603279",

language = "英语",

volume = "21",

pages = "1758--1764",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Mahapatra, R, Maikap, S, Lee, JH, Kar, GS, Dhar, A, Doh-Y. Kim, K, Bhattacharya, D & Ray, SK 2003, 'Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 卷 21, 編號 5, 頁 1758-1764. https://doi.org/10.1116/1.1603279

TY - JOUR

T1 - Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers

AU - Mahapatra, R.

AU - Maikap, S.

AU - Lee, Je Hun

AU - Kar, G. S.

AU - Dhar, A.

AU - Doh-Y. Kim, Kim

AU - Bhattacharya, D.

AU - Ray, S. K.

PY - 2003/9

Y1 - 2003/9

N2 - The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

AB - The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers

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Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers