摘要
In this article, the structural and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm 2 Ti 2 O 7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm 2 Ti 2 O 7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.
原文 | 英語 |
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頁(從 - 到) | 1845-1848 |
頁數 | 4 |
期刊 | Applied Surface Science |
卷 | 256 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 01 01 2010 |