Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Shih Cheng Yang; Hsien Chin Chiu; Ming Jyh Hwu; Wen Kai Wang; Cheng Kuo Lin; Yi Jen Chan

doi:10.1109/TED.2003.813341

Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Shih Cheng Yang^*
, Hsien Chin Chiu
, Ming Jyh Hwu
, Wen Kai Wang
, Cheng Kuo Lin
, Yi Jen Chan

^*此作品的通信作者

National Central University

研究成果: 期刊稿件 › 文章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

High performance submicron In_0.49Ga_0.51P/In_0.15Ga_0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl₃ +CHF₃ reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (f_T), maximum frequency of oscillation (f_max), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm² gate-dimension DCFET exhibits a saturated P_out of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

原文	英語
頁（從 - 到）	1555-1558
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	6
DOIs	https://doi.org/10.1109/TED.2003.813341
出版狀態	已出版 - 06 2003
對外發佈	是

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title = "Submicron RIE recessed InGaP/InGaAs doped-channel FETs",

abstract = "High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 {\texttimes} 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35\%, and an associated gain of 14 dB at 2.4 GHz.",

keywords = "Doped-channel FET, Power performance, Reactive ion etching, Submicron",

author = "Yang, \{Shih Cheng\} and Chiu, \{Hsien Chin\} and Hwu, \{Ming Jyh\} and Wang, \{Wen Kai\} and Lin, \{Cheng Kuo\} and Chan, \{Yi Jen\}",

year = "2003",

month = jun,

doi = "10.1109/TED.2003.813341",

language = "英语",

volume = "50",

pages = "1555--1558",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Submicron RIE recessed InGaP/InGaAs doped-channel FETs

AU - Yang, Shih Cheng

AU - Chiu, Hsien Chin

AU - Hwu, Ming Jyh

AU - Wang, Wen Kai

AU - Lin, Cheng Kuo

AU - Chan, Yi Jen

PY - 2003/6

Y1 - 2003/6

N2 - High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

AB - High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

KW - Doped-channel FET

KW - Power performance

KW - Reactive ion etching

KW - Submicron

UR - https://www.scopus.com/pages/publications/0042665515

U2 - 10.1109/TED.2003.813341

DO - 10.1109/TED.2003.813341

M3 - 文章

AN - SCOPUS:0042665515

SN - 0018-9383

VL - 50

SP - 1555

EP - 1558

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Submicron RIE recessed InGaP/InGaAs doped-channel FETs

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