Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes

Li Zen Hsieh; Der Hwa Yeh; Liann Be Chang; Ta Wei Soong; Ping Yu Kuei

doi:10.1143/JJAP.45.6911

Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes

Li Zen Hsieh^*
, Der Hwa Yeh
, Liann Be Chang
, Ta Wei Soong
, Ping Yu Kuei

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This study is focused on the temperature characteristics of platinum-diffused AlGalnP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100°C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.

原文	英語
頁（從 - 到）	6911-6913
頁數	3
期刊	Japanese Journal of Applied Physics
卷	45
發行號	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6911
出版狀態	已出版 - 07 09 2006
對外發佈	是

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@article{82a594a4d03e4bd48fd5a8824d2fe6ee,

title = "Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes",

abstract = "This study is focused on the temperature characteristics of platinum-diffused AlGalnP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100°C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.",

keywords = "AlGaInP, Characteristic temperature, Diffusion, Platinum (Pt), Resonant-cavity light-emitting diodes (RCLEDs)",

author = "Hsieh, \{Li Zen\} and Yeh, \{Der Hwa\} and Chang, \{Liann Be\} and Soong, \{Ta Wei\} and Kuei, \{Ping Yu\}",

year = "2006",

month = sep,

day = "7",

doi = "10.1143/JJAP.45.6911",

language = "英语",

volume = "45",

pages = "6911--6913",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "9 A",

}

TY - JOUR

T1 - Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes

AU - Hsieh, Li Zen

AU - Yeh, Der Hwa

AU - Chang, Liann Be

AU - Soong, Ta Wei

AU - Kuei, Ping Yu

PY - 2006/9/7

Y1 - 2006/9/7

N2 - This study is focused on the temperature characteristics of platinum-diffused AlGalnP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100°C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.

AB - This study is focused on the temperature characteristics of platinum-diffused AlGalnP resonant-cavity light-emitting diodes (RCLED). The shape of the platinum-diffused AlGaInP RCLED emission spectra and the full width at half maximum (FWHM) of the main electroluminescent (EL) spectra are almost uninfluenced over the measured temperature range of 20 to 100°C. Therefore, the platinum-diffused devices show a high characteristic temperature, and a small temperature shift in the peak emission wavelength.

KW - AlGaInP

KW - Characteristic temperature

KW - Diffusion

KW - Platinum (Pt)

KW - Resonant-cavity light-emitting diodes (RCLEDs)

UR - https://www.scopus.com/pages/publications/33749008192

U2 - 10.1143/JJAP.45.6911

DO - 10.1143/JJAP.45.6911

M3 - 文章

AN - SCOPUS:33749008192

SN - 0021-4922

VL - 45

SP - 6911

EP - 6913

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Temperature characteristics of high modulation rate platinum-diffused AlGaInP resonant-cavity light-emitting diodes

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