Temperature dependence of photoreflectance in InAs/GaAs quantum dots

C. M. Lai; F. Y. Chang; C. W. Chang; C. H. Kao; H. H. Lin; G. J. Jan; Johnson Lee

doi:10.1063/1.1581003

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

C. M. Lai^*
, F. Y. Chang
, C. W. Chang
, C. H. Kao
, H. H. Lin
, G. J. Jan
, Johnson Lee

^*此作品的通信作者

National Taiwan University
Chung Yuan Christian University

研究成果: 期刊稿件 › 文章 › 同行評審

18 引文斯高帕斯（Scopus）

摘要

A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

原文	英語
頁（從 - 到）	3895-3897
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	22
DOIs	https://doi.org/10.1063/1.1581003
出版狀態	已出版 - 02 06 2003
對外發佈	是

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title = "Temperature dependence of photoreflectance in InAs/GaAs quantum dots",

abstract = "A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.",

author = "Lai, \{C. M.\} and Chang, \{F. Y.\} and Chang, \{C. W.\} and Kao, \{C. H.\} and Lin, \{H. H.\} and Jan, \{G. J.\} and Johnson Lee",

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AU - Lai, C. M.

AU - Chang, F. Y.

AU - Chang, C. W.

AU - Kao, C. H.

AU - Lin, H. H.

AU - Jan, G. J.

AU - Lee, Johnson

PY - 2003/6/2

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N2 - A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

AB - A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

UR - https://www.scopus.com/pages/publications/0037631822

U2 - 10.1063/1.1581003

DO - 10.1063/1.1581003

M3 - 文章

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SN - 0003-6951

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SP - 3895

EP - 3897

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

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