The characteristics of 6-inch gan on si rf hemt with high isolation composited buffer layer design

Chong Rong Huang; Chia Hao Liu; Hsiang Chun Wang; Hsuan Ling Kao; Hsien Chin Chiu; Chih Tien Chen; Kuo Jen Chang

doi:10.3390/electronics10010046

The characteristics of 6-inch gan on si rf hemt with high isolation composited buffer layer design

Chong Rong Huang
, Chia Hao Liu
, Hsiang Chun Wang
, Hsuan Ling Kao
, Hsien Chin Chiu^*
, Chih Tien Chen
, Kuo Jen Chang

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University
Chung-shan Institute of Science and Technology Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

In this study, a 50-nm Al_0.05Ga_0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The I_on/I_off ratio of the BB device was 4.66 × 10⁵, and the ratio for the device without BB was 1.91 × 10³. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-µm gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz.

原文	英語
文章編號	46
頁（從 - 到）	1-7
頁數	7
期刊	Electronics (Switzerland)
卷	10
發行號	1
DOIs	https://doi.org/10.3390/electronics10010046
出版狀態	已出版 - 01 2021

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Publisher Copyright:
© 2020 by the authors. Li-censee MDPI, Basel, Switzerland.

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10.3390/electronics10010046

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@article{13025edfb60c467089d79f9b5ac7b935,

title = "The characteristics of 6-inch gan on si rf hemt with high isolation composited buffer layer design",

abstract = "In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 4.66 {\texttimes} 105, and the ratio for the device without BB was 1.91 {\texttimes} 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-µm gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz.",

keywords = "Back barrier (BB) layer, Conduction band energy, Current gain (f), Power gain (f)",

author = "Huang, \{Chong Rong\} and Liu, \{Chia Hao\} and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Chiu, \{Hsien Chin\} and Chen, \{Chih Tien\} and Chang, \{Kuo Jen\}",

note = "Publisher Copyright: {\textcopyright} 2020 by the authors. Li-censee MDPI, Basel, Switzerland.",

year = "2021",

month = jan,

doi = "10.3390/electronics10010046",

language = "英语",

volume = "10",

pages = "1--7",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "1",

}

TY - JOUR

T1 - The characteristics of 6-inch gan on si rf hemt with high isolation composited buffer layer design

AU - Huang, Chong Rong

AU - Liu, Chia Hao

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chiu, Hsien Chin

AU - Chen, Chih Tien

AU - Chang, Kuo Jen

PY - 2021/1

Y1 - 2021/1

N2 - In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 4.66 × 105, and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-µm gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz.

AB - In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 4.66 × 105, and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-µm gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz.

KW - Back barrier (BB) layer

KW - Conduction band energy

KW - Current gain (f)

KW - Power gain (f)

UR - https://www.scopus.com/pages/publications/85098885817

U2 - 10.3390/electronics10010046

DO - 10.3390/electronics10010046

M3 - 文章

AN - SCOPUS:85098885817

SN - 2079-9292

VL - 10

SP - 1

EP - 7

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 1

M1 - 46

ER -

The characteristics of 6-inch gan on si rf hemt with high isolation composited buffer layer design

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