The characteristics of platinum diffusion in n-type GaN

Der Hwa Yeh; Li Zen Hsieh; Liann Be Chang; Ming Jer Jeng

doi:10.1016/j.apsusc.2007.02.018

The characteristics of platinum diffusion in n-type GaN

Der Hwa Yeh, Li Zen Hsieh, Liann Be Chang, Ming Jer Jeng^*

^*此作品的通信作者

National Defense University Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10 ^-14 , 1.572 × 10 ^-13 and 3.216 × 10 ^-13 cm ² /s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10 ^-9 cm ² /s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.

原文	英語
頁（從 - 到）	6910-6914
頁數	5
期刊	Applied Surface Science
卷	253
發行號	16
DOIs	https://doi.org/10.1016/j.apsusc.2007.02.018
出版狀態	已出版 - 15 06 2007

存取文件

10.1016/j.apsusc.2007.02.018

其它文件與鏈接

Link to publication in Scopus

引用此

@article{693e9ea9dc0d4a85bde9a2a88d26c15e,

title = "The characteristics of platinum diffusion in n-type GaN",

abstract = " The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10 -14 , 1.572 × 10 -13 and 3.216 × 10 -13 cm 2 /s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10 -9 cm 2 /s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.",

keywords = "Activation energy, Diffusion coefficient, GaN, PL, Platinum diffusion, SIMS",

author = "Yeh, {Der Hwa} and Hsieh, {Li Zen} and Chang, {Liann Be} and Jeng, {Ming Jer}",

year = "2007",

month = jun,

day = "15",

doi = "10.1016/j.apsusc.2007.02.018",

language = "英语",

volume = "253",

pages = "6910--6914",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "16",

}

TY - JOUR

T1 - The characteristics of platinum diffusion in n-type GaN

AU - Yeh, Der Hwa

AU - Hsieh, Li Zen

AU - Chang, Liann Be

AU - Jeng, Ming Jer

PY - 2007/6/15

Y1 - 2007/6/15

N2 - The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10 -14 , 1.572 × 10 -13 and 3.216 × 10 -13 cm 2 /s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10 -9 cm 2 /s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.

AB - The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10 -14 , 1.572 × 10 -13 and 3.216 × 10 -13 cm 2 /s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10 -9 cm 2 /s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.

KW - Activation energy

KW - Diffusion coefficient

KW - GaN

KW - PL

KW - Platinum diffusion

KW - SIMS

UR - http://www.scopus.com/inward/record.url?scp=34248403749&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2007.02.018

DO - 10.1016/j.apsusc.2007.02.018

M3 - 文章

AN - SCOPUS:34248403749

SN - 0169-4332

VL - 253

SP - 6910

EP - 6914

JO - Applied Surface Science

JF - Applied Surface Science

IS - 16

ER -

The characteristics of platinum diffusion in n-type GaN

摘要

存取文件

其它文件與鏈接

指紋

引用此