The comparison of the high-k Sm2O3 and Sm2 TiO5 dielectrics deposited on the polycrystalline silicon

Chyuan Haur Kao*, Hsiang Chen, Shih Po Lin

*此作品的通信作者

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12 引文 斯高帕斯(Scopus)

摘要

In this study, the Ti-doped high- k Sm2 TiO5 polyoxide dielectric deposited on poly-Silicon treated with the postrapid thermal annealing (RTA) showed a higher effective dielectric constant, lower leakage current, higher breakdown electric field, smaller gate voltage shift, lower electron trapping rate, and larger Qbd than those of the high- k Sm2 O3 polyoxide dielectric. The high- k Sm2 Ti O5 treated with post-RTA at 800°C had the best dielectric performance among all the conditions. Incorporating some Ti content into the Sm2 O3 dielectric made noticeable improvements in the electrical performance and material quality. The Sm2 Ti O5 dielectric is a very promising high- k dielectric for the future nonvolatile memory applications.

原文英語
頁(從 - 到)G9-G12
期刊Electrochemical and Solid-State Letters
14
發行號2
DOIs
出版狀態已出版 - 2011

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