The demonstration and characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) substrate

In this work, AlGaN/GaN high electron mobility transistors (HEMTs) with an unintentionally doped (UID) u-GaN buffer and 15nm of In-situ SiNx on silicon-on-insulator (SOI) substrates were presented for RF applications. In order to investigate the effects of the SOI substrates to device characteristics, HEMT devices on SOI were fabricated alongside with same structure on high resistance Silicon (HR-Si) substrate and also alongside with the conventional devices without In-situ SiNx on high resistance Silicon (HR-Si) substrate to clarify the influence of the in-situ SiNx . Experimentally, the SOI substrate device showed better DC, breakdown voltage and RF characteristics compared to devices on HR-Si. These advantages suggest that the SOI substrate device is suitable for high speed and high-power integrated circuit applications.