The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

Kuang Po Hsueh; Hao Yu Wang; Hsien Chin Chiu; Hsiang Chun Wang; Hsuan Ling Kao; Feng Tso Chien

doi:10.1109/WiPDAAsia.2019.8760336

The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

Kuang Po Hsueh
, Hao Yu Wang
, Hsien Chin Chiu
, Hsiang Chun Wang
, Hsuan Ling Kao
, Feng Tso Chien

電子工程學系(含學碩博士班)

Vanung University Taiwan
Chang Gung University
Feng Chia University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper presents the recessed anodes AlGaN/GaN Schottky barrier diodes (SBDs) using cyclic microwave plasma oxidation and wet etching techniques which were investigated to reduce the damage and contamination on the recessed GaN-based surface. Wide bandgap Ga-doped MgZnO (GMZO) sidewall layer structure was also conducted to suppress the hard breakdown mechanism at high reserve voltage. The SBD with recessed anodes and GMZO sidewall structure had specific on-resistance (R_ON-SP) of 1.99 mΩ-cm², turn-on voltage (V_ON) of 0.40 V, and breakdown voltage of 465 V. The SBDs in this study realized higher R_ON-SP and lower V_ON than that of the conventional device. In addition, the reverse recovery and low frequency noise characteristics of SBD with recessed anode and GMZO sidewall structure were lower than those in conventional structure because of the anode metals are close to a high-density 2DEG by using recessed structure and the leakage current from the etching damages is declined by using GMZO sidewall structure.

原文	英語
主出版物標題	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728121451
DOIs	https://doi.org/10.1109/WiPDAAsia.2019.8760336
出版狀態	已出版 - 05 2019
事件	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, 台灣持續時間: 23 05 2019 → 25 05 2019

出版系列

名字	WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
國家/地區	台灣
城市	Taipei
期間	23/05/19 → 25/05/19

文獻附註

Publisher Copyright:
© 2019 IEEE.

存取文件

10.1109/WiPDAAsia.2019.8760336

其它文件與鏈接

Link to publication in Scopus

引用此

Hsueh, K. P., Wang, H. Y., Chiu, H. C., Wang, H. C., Kao, H. L., & Chien, F. T. (2019). The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 文章 8760336 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2019.8760336

Hsueh, Kuang Po ; Wang, Hao Yu ; Chiu, Hsien Chin 等. / The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

@inproceedings{515c546f94d940889238b89a44d6c808,

title = "The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques",

abstract = "This paper presents the recessed anodes AlGaN/GaN Schottky barrier diodes (SBDs) using cyclic microwave plasma oxidation and wet etching techniques which were investigated to reduce the damage and contamination on the recessed GaN-based surface. Wide bandgap Ga-doped MgZnO (GMZO) sidewall layer structure was also conducted to suppress the hard breakdown mechanism at high reserve voltage. The SBD with recessed anodes and GMZO sidewall structure had specific on-resistance (RON-SP) of 1.99 mΩ-cm2, turn-on voltage (VON) of 0.40 V, and breakdown voltage of 465 V. The SBDs in this study realized higher RON-SP and lower VON than that of the conventional device. In addition, the reverse recovery and low frequency noise characteristics of SBD with recessed anode and GMZO sidewall structure were lower than those in conventional structure because of the anode metals are close to a high-density 2DEG by using recessed structure and the leakage current from the etching damages is declined by using GMZO sidewall structure.",

keywords = "Gan, Mgzno, Microwave plasma oxidation, Recessed anode, Schottky barrier diode, Wet etching",

author = "Hsueh, \{Kuang Po\} and Wang, \{Hao Yu\} and Chiu, \{Hsien Chin\} and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Chien, \{Feng Tso\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 ; Conference date: 23-05-2019 Through 25-05-2019",

year = "2019",

month = may,

doi = "10.1109/WiPDAAsia.2019.8760336",

language = "英语",

series = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美国",

}

Hsueh, KP, Wang, HY, Chiu, HC, Wang, HC, Kao, HL & Chien, FT 2019, The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia., 8760336, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019, Taipei, 台灣, 23/05/19. https://doi.org/10.1109/WiPDAAsia.2019.8760336

The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. / Hsueh, Kuang Po; Wang, Hao Yu; Chiu, Hsien Chin 等.
WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2019. 8760336 (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

AU - Hsueh, Kuang Po

AU - Wang, Hao Yu

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chien, Feng Tso

PY - 2019/5

Y1 - 2019/5

N2 - This paper presents the recessed anodes AlGaN/GaN Schottky barrier diodes (SBDs) using cyclic microwave plasma oxidation and wet etching techniques which were investigated to reduce the damage and contamination on the recessed GaN-based surface. Wide bandgap Ga-doped MgZnO (GMZO) sidewall layer structure was also conducted to suppress the hard breakdown mechanism at high reserve voltage. The SBD with recessed anodes and GMZO sidewall structure had specific on-resistance (RON-SP) of 1.99 mΩ-cm2, turn-on voltage (VON) of 0.40 V, and breakdown voltage of 465 V. The SBDs in this study realized higher RON-SP and lower VON than that of the conventional device. In addition, the reverse recovery and low frequency noise characteristics of SBD with recessed anode and GMZO sidewall structure were lower than those in conventional structure because of the anode metals are close to a high-density 2DEG by using recessed structure and the leakage current from the etching damages is declined by using GMZO sidewall structure.

AB - This paper presents the recessed anodes AlGaN/GaN Schottky barrier diodes (SBDs) using cyclic microwave plasma oxidation and wet etching techniques which were investigated to reduce the damage and contamination on the recessed GaN-based surface. Wide bandgap Ga-doped MgZnO (GMZO) sidewall layer structure was also conducted to suppress the hard breakdown mechanism at high reserve voltage. The SBD with recessed anodes and GMZO sidewall structure had specific on-resistance (RON-SP) of 1.99 mΩ-cm2, turn-on voltage (VON) of 0.40 V, and breakdown voltage of 465 V. The SBDs in this study realized higher RON-SP and lower VON than that of the conventional device. In addition, the reverse recovery and low frequency noise characteristics of SBD with recessed anode and GMZO sidewall structure were lower than those in conventional structure because of the anode metals are close to a high-density 2DEG by using recessed structure and the leakage current from the etching damages is declined by using GMZO sidewall structure.

KW - Gan

KW - Mgzno

KW - Microwave plasma oxidation

KW - Recessed anode

KW - Schottky barrier diode

KW - Wet etching

UR - https://www.scopus.com/pages/publications/85070310469

U2 - 10.1109/WiPDAAsia.2019.8760336

DO - 10.1109/WiPDAAsia.2019.8760336

M3 - 会议稿件

AN - SCOPUS:85070310469

T3 - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019

Y2 - 23 May 2019 through 25 May 2019

ER -

Hsueh KP, Wang HY, Chiu HC, Wang HC, Kao HL, Chien FT. The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. 於 WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2019. 8760336. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia.2019.8760336

The demonstration of recessed anodes algan/gan schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

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