The dependence of excitonic characteristics on the interface charge distribution with multiquantum barrier

Tzer En Nee*, Jen Cheng Wang, Hui Tang Shen, Ya Fen Wu

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carriertransport mechanisms in the heterodevices. Furthermore, the carrier tunneling processes via the extent of the charge population consequently cause anomaly more pseudotemperature (T0) and further characteristic energy (E 0), result in the bnormal deterioration of the luminescence intensities with small effective density of state. With respect to conventional GaN barrier devices, low-indium MQB devices inherently exhibit a small T 0 over a variety of temperature ranges. The small T0 associated with a small characteristic energy and charge population of the multilayer interface states is obtained for each sample at the higher temperature regime. Accordingly, the high-indium MQB ensemble manifests a relatively higher characteristic energy than does the low-indium MQB ensemble. The characteristic energy E0 for the LEDs with InxGa 1-xN/GaN multiquantum barriers were found to be decreased as increased In composition of InxGa1-4N/GaN MQBs. Correspondingly, the temperature-dependent electroluminescence observations suggest that the characteristic energy E0 anomaly caused the spectral intensity to deteriorate.

原文英語
主出版物標題2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
頁面709-713
頁數5
DOIs
出版狀態已出版 - 2007
事件2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, 中國
持續時間: 02 08 200705 08 2007

出版系列

名字2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
國家/地區中國
城市Hong Kong
期間02/08/0705/08/07

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