The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai; Tan Fu Lei; Chung Len Lee

doi:10.1109/55.406796

The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai, Tan Fu Lei, Chung Len Lee

National Yang Ming Chiao Tung University

研究成果: 期刊稿件 › 文章 › 同行評審

22 引文斯高帕斯（Scopus）

摘要

N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

原文	英語
頁（從 - 到）	385-386
頁數	2
期刊	IEEE Electron Device Letters
卷	16
發行號	9
DOIs	https://doi.org/10.1109/55.406796
出版狀態	已出版 - 09 1995
對外發佈	是

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abstract = "N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.",

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AB - N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

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The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

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