The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs

Hsien Chin Chiu; Shih Cheng Yang; Yi Jen Chan; Shu Han Chen; Wei Sheng Liu; Jen Inn Chyi

doi:10.1109/TED.2003.820646

The microwave power performance comparisons of Al_xGa_1-xAs/In_0.15Ga_0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs

Hsien Chin Chiu^*
, Shih Cheng Yang
, Yi Jen Chan
, Shu Han Chen
, Wei Sheng Liu
, Jen Inn Chyi

^*此作品的通信作者

National Central University

研究成果: 期刊稿件 › 文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on Al_xGa_1-xAs/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Å-thick Al_0.5Ga_0.5As (x = 0.5) Schottky layer can enhance the device power performance, as compared with the conventional x = 0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al_0.5Ga_0.5As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications.

原文	英語
頁（從 - 到）	156-158
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	51
發行號	1
DOIs	https://doi.org/10.1109/TED.2003.820646
出版狀態	已出版 - 01 2004
對外發佈	是

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10.1109/TED.2003.820646

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@article{7ebdc0706cff410fa6ab108f6bd8894a,

title = "The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs",

abstract = "The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on AlxGa1-xAs/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-{\AA}-thick Al0.5Ga0.5As (x = 0.5) Schottky layer can enhance the device power performance, as compared with the conventional x = 0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al0.5Ga0.5As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications.",

keywords = "AlGaAs, Doped-channel field-effect transistors (DCFET), Linearity, Power performance",

author = "Chiu, \{Hsien Chin\} and Yang, \{Shih Cheng\} and Chan, \{Yi Jen\} and Chen, \{Shu Han\} and Liu, \{Wei Sheng\} and Chyi, \{Jen Inn\}",

year = "2004",

month = jan,

doi = "10.1109/TED.2003.820646",

language = "英语",

volume = "51",

pages = "156--158",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs

AU - Chiu, Hsien Chin

AU - Yang, Shih Cheng

AU - Chan, Yi Jen

AU - Chen, Shu Han

AU - Liu, Wei Sheng

AU - Chyi, Jen Inn

PY - 2004/1

Y1 - 2004/1

N2 - The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on AlxGa1-xAs/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Å-thick Al0.5Ga0.5As (x = 0.5) Schottky layer can enhance the device power performance, as compared with the conventional x = 0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al0.5Ga0.5As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications.

AB - The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on AlxGa1-xAs/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Å-thick Al0.5Ga0.5As (x = 0.5) Schottky layer can enhance the device power performance, as compared with the conventional x = 0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al0.5Ga0.5As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications.

KW - AlGaAs

KW - Doped-channel field-effect transistors (DCFET)

KW - Linearity

KW - Power performance

UR - https://www.scopus.com/pages/publications/0742321652

U2 - 10.1109/TED.2003.820646

DO - 10.1109/TED.2003.820646

M3 - 文章

AN - SCOPUS:0742321652

SN - 0018-9383

VL - 51

SP - 156

EP - 158

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs

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The microwave power performance comparisons of Al_xGa_1-xAs/In_0.15Ga_0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs