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The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition

  • Kong Wei Cheng*
  • , Chao Ming Huang
  • , Guan Ting Pan
  • , Jau Chyn Huang
  • , Tai Chou Lee
  • , Thomas C.K. Yang
  • *此作品的通信作者
  • Kun Shan University
  • National Taipei University of Technology
  • Industrial Technology Research Institute of Taiwan
  • National Chung Cheng University

研究成果: 期刊稿件文章同行評審

9 引文 斯高帕斯(Scopus)

摘要

The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 × 1014 to 9.85 × 1014 cm-3, respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm2 under illumination using a 300 Xe lamp system. Crown

原文英語
頁(從 - 到)107-114
頁數8
期刊Journal of Photochemistry and Photobiology A: Chemistry
202
發行號2-3
DOIs
出版狀態已出版 - 25 02 2009

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