@inproceedings{d870f512e18a4161a68e5c05f3a782af,
title = "The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation",
abstract = "In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.",
keywords = "LED, PEC, nanorod",
author = "Lin, {Woei Tyng} and Lai, {Fang I.} and Kuo, {Shou Yi} and Huang, {Shao Chun}",
year = "2011",
doi = "10.1109/INEC.2011.5991695",
language = "英语",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}