The reflectivity enhancement of Ni/Ag/(Ti or Mo)/Au ohmic contact for flip-chip light-emitting diode applications

Liann Be Chang*, Ching Chuan Shiue, Ming Jer Jeng

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

2 引文 斯高帕斯(Scopus)

摘要

The proposed multilayer structures Ni/Ag/M/Au, with blocking metal (M) of Ti and Mo, to form both ohmic and reflective contact for flip chip light emitting diode (FCLED) application, are fabricated. During the annealing process of conventional three-layer Ni/Ag/Au contacts, serious Au intermixing with Ag and Ni was found to result in poor reflectance (63% at the wavelength of 465 nm). It is found that the inserted (between Ni/Ag and Au) diffusion barrier (Ti or Mo) can block Au inter diffusion effectively and hence improves the correspondent FCLED reflectivity (as high as 93%).

原文英語
主出版物標題15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
頁面177-180
頁數4
DOIs
出版狀態已出版 - 2007
事件15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 - Catania, 意大利
持續時間: 02 10 200705 10 2007

出版系列

名字15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Conference

Conference15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
國家/地區意大利
城市Catania
期間02/10/0705/10/07

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