@inproceedings{7e66401b004d49faaff65a6b792a9c85,
title = "The reliability study and device modeling for p-HEMT microwave power transistors",
abstract = "In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the deembedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.",
author = "Liu, {S. L.} and Chang, {H. M.} and T. Chang and Kao, {H. L.} and Cheng, {C. H.} and A. Chin",
year = "2011",
doi = "10.1149/1.3629965",
language = "英语",
isbn = "9781566779067",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "175--187",
booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",
edition = "6",
note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}