The surface site de-hydration mechanism for Si3N4 sensing membrane by post-baking treatment

Chao Sung Lai*, Chia Ming Yang, Chili Yao Wang, Cheng En Lue, T. F. Lue, Hung Pin Ko, T. M. Wang

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

This work presented a post-baking treatment effect on Si3N4 sensing membrane for the pH response. Special measurement sequences were proposed to verify the surface site activation and de-hydration. Sensitivity was improved by pH4 buffer solution immersion. However, sensitivities were decreased 3-8.5 mV/pH and 1-2.8mV/pH by first and second baking cycle respectively. Higher baking temperature made the sensitivity decrease more. It was due to ion and surface site exchange and repaired the dangling bond on sensing membrane during buffer immersion. The post-baking treatment broke some active sites by thermal energy. The higher baking temperature provided more thermal energy to break active sites and degrade more sensitivity. A novel physical model was proposed for the activation and de-hydration behavior.

原文英語
主出版物標題2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
頁面298-301
頁數4
出版狀態已出版 - 2004
事件2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, 馬來西亞
持續時間: 04 12 200409 12 2004

出版系列

名字Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
國家/地區馬來西亞
城市Kuala Lumpur
期間04/12/0409/12/04

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