The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Chyuan Haur Kao; Chao Sung Lai; Chung Len Lee

doi:10.1109/55.641434

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Chyuan Haur Kao^*
, Chao Sung Lai
, Chung Len Lee

^*此作品的通信作者

National Yang Ming Chiao Tung University

研究成果: 期刊稿件 › 文章 › 同行評審

17 引文斯高帕斯（Scopus）

摘要

A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm²). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

原文	英語
頁（從 - 到）	526-528
頁數	3
期刊	IEEE Electron Device Letters
卷	18
發行號	11
DOIs	https://doi.org/10.1109/55.641434
出版狀態	已出版 - 11 1997
對外發佈	是

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title = "The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing",

abstract = "A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.",

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AU - Kao, Chyuan Haur

AU - Lai, Chao Sung

AU - Lee, Chung Len

PY - 1997/11

Y1 - 1997/11

N2 - A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

AB - A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

UR - https://www.scopus.com/pages/publications/0031273467

U2 - 10.1109/55.641434

DO - 10.1109/55.641434

M3 - 文章

AN - SCOPUS:0031273467

SN - 0741-3106

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SP - 526

EP - 528

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

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