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The thermal model for carrier hopping and retrapping in self-organized InAs quantum dot heterostructure

  • Ya Fen Wu*
  • , Hui Tang Shen
  • , Ray Min Lin
  • , Tzer En Nee
  • , Nien Tze Yeh
  • , Tung Po Hsieh
  • , Jiunn Chyi Lee
  • *此作品的通信作者
  • Chang Gung University
  • Chunghwa Telecom Co. Ltd.
  • Taipei City University of Science and Technology

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

A steady-state thermal model based on a set of rate equations is proposed in this article. The carrier dynamics of the main components in quantum dot (QD) systems, including the intersublevels in InAs QDs, the wetting layer, and the GaAs barriers, are all described by the equations. The QD sizes distribution, carrier capture, carrier relaxation, thermal escape and retrapping are all taken into account in this model. Two InAs QD samples with different size distributions and uniformities were grown. The measured temperature dependent photoluminescence (PL) spectra of the samples are consistent with the computational results. Furthermore, we also analyze the relationships between the carrier dynamics and the full width at half maximum (FWHM) for the samples.

原文英語
主出版物標題PHYSICS OF SEMICONDUCTORS
主出版物子標題27th International Conference on the Physics of Semiconductors, ICPS-27
頁面647-648
頁數2
DOIs
出版狀態已出版 - 30 06 2005
事件PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, 美國
持續時間: 26 07 200430 07 2004

出版系列

名字AIP Conference Proceedings
772
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
國家/地區美國
城市Flagstaff, AZ
期間26/07/0430/07/04

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