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Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots

  • Jiunn Chyi Lee*
  • , Yeu Jent Hu
  • , Ya Fen Wu
  • , Jia Hui Fang
  • , Tzer En Nee
  • , Hui Tang Shen
  • , Jen Cheng Wang
  • *此作品的通信作者
  • Taipei City University of Science and Technology
  • Chang Gung University

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample.

原文英語
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面965-967
頁數3
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態已出版 - 2006
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中國
持續時間: 23 10 200626 10 2006

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家/地區中國
城市Shanghai
期間23/10/0626/10/06

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