Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

Wei Yin Zeng; Tsung Cheng Chen; Hui Ling Liu; Yu Ping Chen; Chia Ming Yang

doi:10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

Wei Yin Zeng
, Tsung Cheng Chen
, Hui Ling Liu
, Yu Ping Chen
, Chia Ming Yang^*

^*此作品的通信作者

光電工程研究所(碩士班)

Chang Gung University
Chang Gung Memorial Hospital

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

原文	英語
主出版物標題	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1540-1542
頁數	3
ISBN（電子）	9781538627310
DOIs	https://doi.org/10.1109/TRANSDUCERS.2017.7994353
出版狀態	已出版 - 26 07 2017
事件	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, 台灣持續時間: 18 06 2017 → 22 06 2017

出版系列

名字	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
國家/地區	台灣
城市	Kaohsiung
期間	18/06/17 → 22/06/17

文獻附註

Publisher Copyright:
© 2017 IEEE.

存取文件

10.1109/TRANSDUCERS.2017.7994353

其它文件與鏈接

Link to publication in Scopus

引用此

Zeng, W. Y., Chen, T. C., Liu, H. L., Chen, Y. P., & Yang, C. M. (2017). Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. 於 TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (頁 1540-1542). 文章 7994353 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994353

Zeng, Wei Yin ; Chen, Tsung Cheng ; Liu, Hui Ling 等. / Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 1540-1542 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

@inproceedings{5d9cdcdb064f4779b4f6da61de2f6200,

title = "Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching",

abstract = "To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.",

keywords = "2D, Chemical image, DRIE, LAPS, Si",

author = "Zeng, \{Wei Yin\} and Chen, \{Tsung Cheng\} and Liu, \{Hui Ling\} and Chen, \{Yu Ping\} and Yang, \{Chia Ming\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 ; Conference date: 18-06-2017 Through 22-06-2017",

year = "2017",

month = jul,

day = "26",

doi = "10.1109/TRANSDUCERS.2017.7994353",

language = "英语",

series = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1540--1542",

booktitle = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",

address = "美国",

}

Zeng, WY, Chen, TC, Liu, HL, Chen, YP & Yang, CM 2017, Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. 於 TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994353, TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, Institute of Electrical and Electronics Engineers Inc., 頁 1540-1542, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, 台灣, 18/06/17. https://doi.org/10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. / Zeng, Wei Yin; Chen, Tsung Cheng; Liu, Hui Ling 等.
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1540-1542 7994353 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

AU - Zeng, Wei Yin

AU - Chen, Tsung Cheng

AU - Liu, Hui Ling

AU - Chen, Yu Ping

AU - Yang, Chia Ming

PY - 2017/7/26

Y1 - 2017/7/26

N2 - To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

AB - To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

KW - 2D

KW - Chemical image

KW - DRIE

KW - LAPS

KW - Si

UR - https://www.scopus.com/pages/publications/85029383500

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M3 - 会议稿件

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SP - 1540

EP - 1542

BT - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017

Y2 - 18 June 2017 through 22 June 2017

ER -

Zeng WY, Chen TC, Liu HL, Chen YP, Yang CM. Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. 於 TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1540-1542. 7994353. (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

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