@inproceedings{9f13399a4c0d4595a5e60b0e385e1ec3,
title = "Transparent resistive random access memory (TRRAM) based on Gd 2O3 film and its resistive switching characteristics",
abstract = "A transparent resistive random access memory (T-RRAM) based on ITO/Gd 2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.",
author = "Liu, {Kou Chen} and Tzeng, {Wen Hsien} and Chang, {Kow Ming} and Chan, {Yi Chun} and Kuo, {Chun Chih} and Cheng, {Chun Wen}",
year = "2010",
doi = "10.1109/INEC.2010.5425137",
language = "英语",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "898--899",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",
}