Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Feng Hsu Fan, Zun Yao Syu, Chia Jung Wu, Zhong Jie Yang, Bo Song Huang, Guan Jhong Wang, Yung Sen Lin, Hsiang Chen, Chyuan Hauer Kao, Chia Feng Lin*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

29 引文 斯高帕斯(Scopus)

摘要

A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.

原文英語
文章編號4968
期刊Scientific Reports
7
發行號1
DOIs
出版狀態已出版 - 01 12 2017

文獻附註

Publisher Copyright:
© 2017 The Author(s).

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