Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin; Chen Yi Niu; Cheng Yu Hsieh; Bau Ming Wang; Wen Ching Hsu; Ray Ming Lin; Yew Chung Sermon Wu

doi:10.1109/LPT.2013.2238226

Using BCl₃-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin^*
, Chen Yi Niu
, Cheng Yu Hsieh
, Bau Ming Wang
, Wen Ching Hsu
, Ray Ming Lin
, Yew Chung Sermon Wu

^*此作品的通信作者

電子工程學系(含學碩博士班)

National Yang Ming Chiao Tung University
Sino-American Silicon Products Inc.

研究成果: 期刊稿件 › 文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl ₃-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

原文	英語
文章編號	6407764
頁（從 - 到）	371-373
頁數	3
期刊	IEEE Photonics Technology Letters
卷	25
發行號	4
DOIs	https://doi.org/10.1109/LPT.2013.2238226
出版狀態	已出版 - 2013

存取文件

10.1109/LPT.2013.2238226

其它文件與鏈接

Link to publication in Scopus

引用此

@article{8917888f9be64713854b8b0cd5f1f016,

title = "Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs",

abstract = "Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.",

keywords = "BCl\}, light-emitting diode (LED), pattern, sapphire",

author = "Lin, \{Bo Wen\} and Niu, \{Chen Yi\} and Hsieh, \{Cheng Yu\} and Wang, \{Bau Ming\} and Hsu, \{Wen Ching\} and Lin, \{Ray Ming\} and Wu, \{Yew Chung Sermon\}",

year = "2013",

doi = "10.1109/LPT.2013.2238226",

language = "英语",

volume = "25",

pages = "371--373",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

AU - Lin, Bo Wen

AU - Niu, Chen Yi

AU - Hsieh, Cheng Yu

AU - Wang, Bau Ming

AU - Hsu, Wen Ching

AU - Lin, Ray Ming

AU - Wu, Yew Chung Sermon

PY - 2013

Y1 - 2013

N2 - Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

AB - Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

KW - BCl}

KW - light-emitting diode (LED)

KW - pattern

KW - sapphire

UR - https://www.scopus.com/pages/publications/84873298706

U2 - 10.1109/LPT.2013.2238226

DO - 10.1109/LPT.2013.2238226

M3 - 文章

AN - SCOPUS:84873298706

SN - 1041-1135

VL - 25

SP - 371

EP - 373

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

M1 - 6407764

ER -

Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

摘要

存取文件

其它文件與鏈接

指紋

引用此

Using BCl₃-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs