V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

Fan Hsiu Huang*, Cheng Kuo Lin, Yi Jen Chan

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

8 引文 斯高帕斯(Scopus)

摘要

A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-μm GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q micros trip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 dBm with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.

原文英語
文章編號1661648
頁(從 - 到)473-475
頁數3
期刊IEEE Microwave and Wireless Components Letters
16
發行號8
DOIs
出版狀態已出版 - 08 2006
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