Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage VBR of 2 kV and an on-state resistance Ron of 1.34 m•cm2, the devices fabricated in this work achieved the highest power device figure-of-merit VBR 2 /Ron of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.