Vertical P-MOSFETs with heterojunction between source/drain and channel

Xiangdong Chen; Qiqing Ouyang; Kou Chen Liu; Zhonghai Shi; Al Tasch; Sanjay Banerjee

Vertical P-MOSFETs with heterojunction between source/drain and channel

Xiangdong Chen^*
, Qiqing Ouyang
, Kou Chen Liu
, Zhonghai Shi
, Al Tasch
, Sanjay Banerjee

^*此作品的通信作者

University of Texas at Austin

研究成果: 會議稿件的類型 › 論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

原文	英語
頁面	25-26
頁數	2
出版狀態	已出版 - 2000
對外發佈	是
事件	58th Device Research Conference (58th DRC) - Denver, CO, USA 持續時間: 19 06 2000 → 21 06 2000

Conference

Conference	58th Device Research Conference (58th DRC)
城市	Denver, CO, USA
期間	19/06/00 → 21/06/00

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "Vertical P-MOSFETs with heterojunction between source/drain and channel",

abstract = "In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.",

author = "Xiangdong Chen and Qiqing Ouyang and Liu, \{Kou Chen\} and Zhonghai Shi and Al Tasch and Sanjay Banerjee",

year = "2000",

language = "英语",

pages = "25--26",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

}

TY - CONF

T1 - Vertical P-MOSFETs with heterojunction between source/drain and channel

AU - Chen, Xiangdong

AU - Ouyang, Qiqing

AU - Liu, Kou Chen

AU - Shi, Zhonghai

AU - Tasch, Al

AU - Banerjee, Sanjay

PY - 2000

Y1 - 2000

N2 - In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

AB - In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

UR - https://www.scopus.com/pages/publications/0033645247

M3 - 论文

AN - SCOPUS:0033645247

SP - 25

EP - 26

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

Vertical P-MOSFETs with heterojunction between source/drain and channel

摘要

Conference

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指紋

引用此