摘要
We demonstrate a very low-power CMOS LNA for ultra-wideband (UWB) applications using current-reused structure. The LNA is fabricated in a 0.18 μm 1P6M standard CMOS process. The IC prototype achieves a power gain of 9-11.5 dB, a noise figure (NF) of 5-5.6 dB, and the input/output return loss is higher than 8.6/8 dB, while only 9.4 mW power consuming from 3.1 to 10.6 GHz.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 86-90 |
| 頁數 | 5 |
| 期刊 | Solid-State Electronics |
| 卷 | 52 |
| 發行號 | 1 |
| DOIs | |
| 出版狀態 | 已出版 - 01 2008 |
指紋
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