Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

P. J. Sung; C. Y. Chang; L. Y. Chen; K. H. Kao; C. J. Su; T. H. Liao; C. C. Fang; C. J. Wang; T. C. Hong; C. Y. Jao; H. S. Hsu; S. X. Luo; Y. S. Wang; H. F. Huang; J. H. Li; Y. C. Huang; F. K. Hsueh; C. T. Wu; Y. M. Huang; F. J. Hou; G. L. Luo; Y. C. Huang; Y. L. Shen; W. C.Y. Ma; K. P. Huang; K. L. Lin; S. Samukawa; Y. Li; G. W. Huang; Y. J. Lee; J. Y. Li; W. F. Wu; J. M. Shieh; T. S. Chao; W. K. Yeh; Y. H. Wang

doi:10.1109/IEDM.2018.8614553

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

P. J. Sung
, C. Y. Chang
, L. Y. Chen
, K. H. Kao
, C. J. Su
, T. H. Liao
, C. C. Fang
, C. J. Wang
, T. C. Hong
, C. Y. Jao
, H. S. Hsu
, S. X. Luo
, Y. S. Wang
, H. F. Huang
, J. H. Li
, Y. C. Huang
, F. K. Hsueh
, C. T. Wu
, Y. M. Huang
, F. J. Hou

G. L. Luo, Y. C. Huang, Y. L. Shen, W. C.Y. Ma, K. P. Huang, K. L. Lin, S. Samukawa, Y. Li, G. W. Huang, Y. J. Lee, J. Y. Li, W. F. Wu, J. M. Shieh, T. S. Chao, W. K. Yeh, Y. H. Wang

National Nano Device Laboratories Taiwan
National Yang Ming Chiao Tung University
National Cheng Kung University
National Sun Yat-sen University
Industrial Technology Research Institute of Taiwan
Tohoku University
National Taiwan University
National Applied Research Laboratories Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

14 引文斯高帕斯（Scopus）

摘要

For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.

原文	英語
主出版物標題	2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	21.4.1-21.4.4
ISBN（電子）	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614553
出版狀態	已出版 - 02 07 2018
對外發佈	是
事件	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, 美國持續時間: 01 12 2018 → 05 12 2018

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2018-December
ISSN（列印）	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區	美國
城市	San Francisco
期間	01/12/18 → 05/12/18

文獻附註

Publisher Copyright:
© 2018 IEEE.

存取文件

10.1109/IEDM.2018.8614553

其它文件與鏈接

Link to publication in Scopus

引用此

Sung, P. J., Chang, C. Y., Chen, L. Y., Kao, K. H., Su, C. J., Liao, T. H., Fang, C. C., Wang, C. J., Hong, T. C., Jao, C. Y., Hsu, H. S., Luo, S. X., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Huang, Y. M., ... Wang, Y. H. (2018). Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018 (頁 21.4.1-21.4.4). 文章 8614553 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614553

Sung, P. J. ; Chang, C. Y. ; Chen, L. Y. 等. / Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 21.4.1-21.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{554deab762164ad69fa6c1081480cdc7,

title = "Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications",

abstract = "For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.",

author = "Sung, \{P. J.\} and Chang, \{C. Y.\} and Chen, \{L. Y.\} and Kao, \{K. H.\} and Su, \{C. J.\} and Liao, \{T. H.\} and Fang, \{C. C.\} and Wang, \{C. J.\} and Hong, \{T. C.\} and Jao, \{C. Y.\} and Hsu, \{H. S.\} and Luo, \{S. X.\} and Wang, \{Y. S.\} and Huang, \{H. F.\} and Li, \{J. H.\} and Huang, \{Y. C.\} and Hsueh, \{F. K.\} and Wu, \{C. T.\} and Huang, \{Y. M.\} and Hou, \{F. J.\} and Luo, \{G. L.\} and Huang, \{Y. C.\} and Shen, \{Y. L.\} and Ma, \{W. C.Y.\} and Huang, \{K. P.\} and Lin, \{K. L.\} and S. Samukawa and Y. Li and Huang, \{G. W.\} and Lee, \{Y. J.\} and Li, \{J. Y.\} and Wu, \{W. F.\} and Shieh, \{J. M.\} and Chao, \{T. S.\} and Yeh, \{W. K.\} and Wang, \{Y. H.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/IEDM.2018.8614553",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "21.4.1--21.4.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "美国",

}

Sung, PJ, Chang, CY, Chen, LY, Kao, KH, Su, CJ, Liao, TH, Fang, CC, Wang, CJ, Hong, TC, Jao, CY, Hsu, HS, Luo, SX, Wang, YS, Huang, HF, Li, JH, Huang, YC, Hsueh, FK, Wu, CT, Huang, YM, Hou, FJ, Luo, GL, Huang, YC, Shen, YL, Ma, WCY, Huang, KP, Lin, KL, Samukawa, S, Li, Y, Huang, GW, Lee, YJ, Li, JY, Wu, WF, Shieh, JM, Chao, TS, Yeh, WK & Wang, YH 2018, Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614553, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2018-December, Institute of Electrical and Electronics Engineers Inc., 頁 21.4.1-21.4.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, 美國, 01/12/18. https://doi.org/10.1109/IEDM.2018.8614553

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications. / Sung, P. J.; Chang, C. Y.; Chen, L. Y. 等.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 21.4.1-21.4.4 8614553 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

AU - Sung, P. J.

AU - Chang, C. Y.

AU - Chen, L. Y.

AU - Kao, K. H.

AU - Su, C. J.

AU - Liao, T. H.

AU - Fang, C. C.

AU - Wang, C. J.

AU - Hong, T. C.

AU - Jao, C. Y.

AU - Hsu, H. S.

AU - Luo, S. X.

AU - Wang, Y. S.

AU - Huang, H. F.

AU - Li, J. H.

AU - Huang, Y. C.

AU - Hsueh, F. K.

AU - Wu, C. T.

AU - Huang, Y. M.

AU - Hou, F. J.

AU - Luo, G. L.

AU - Huang, Y. C.

AU - Shen, Y. L.

AU - Ma, W. C.Y.

AU - Huang, K. P.

AU - Lin, K. L.

AU - Samukawa, S.

AU - Li, Y.

AU - Huang, G. W.

AU - Lee, Y. J.

AU - Li, J. Y.

AU - Wu, W. F.

AU - Shieh, J. M.

AU - Chao, T. S.

AU - Yeh, W. K.

AU - Wang, Y. H.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.

AB - For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry etching process. Compared to single channel devices, stacked n/p-channel FETs exhibit higher on-current with low leakage current. Furthermore, a common-gate process was performed for the fabrication of CMOS inverters. By adjusting the NS layer numbers for n/pFETs, respectively, the voltage transfer characteristics (VTCs) of the CMOS inverter can be matched much better to reduce the noise margin due to on-current matching without area penalty. This work experimentally demonstrates a new configuration of CMOS inverters on stacked NSs, which is promising for System-on-Panel (SoP) and 3D-ICs applications.

UR - https://www.scopus.com/pages/publications/85061775176

U2 - 10.1109/IEDM.2018.8614553

DO - 10.1109/IEDM.2018.8614553

M3 - 会议稿件

AN - SCOPUS:85061775176

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 21.4.1-21.4.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Sung PJ, Chang CY, Chen LY, Kao KH, Su CJ, Liao TH 等. Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 21.4.1-21.4.4. 8614553. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614553

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

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