Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM

C. Y. Liao; Z. F. Lou; C. Y. Lin; A. Senapati; R. Karmakar; K. Y. Hsiang; Z. X. Li; W. C. Ray; J. Y. Lee; P. H. Chen; F. S. Chang; H. H. Tseng; C. C. Wang; J. H. Tsai; Y. T. Tang; S. T. Chang; C. W. Liu; S. Maikap; M. H. Lee

doi:10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM

C. Y. Liao, Z. F. Lou, C. Y. Lin, A. Senapati, R. Karmakar, K. Y. Hsiang, Z. X. Li, W. C. Ray, J. Y. Lee, P. H. Chen, F. S. Chang, H. H. Tseng, C. C. Wang, J. H. Tsai, Y. T. Tang, S. T. Chang, C. W. Liu, S. Maikap^*, M. H. Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3661-3664
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019369
State	Published - 2022
Externally published	Yes
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 03 12 2022 → 07 12 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	03/12/22 → 07/12/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Access to Document

10.1109/IEDM45625.2022.10019369

Cite this

Liao, C. Y., Lou, Z. F., Lin, C. Y., Senapati, A., Karmakar, R., Hsiang, K. Y., Li, Z. X., Ray, W. C., Lee, J. Y., Chen, P. H., Chang, F. S., Tseng, H. H., Wang, C. C., Tsai, J. H., Tang, Y. T., Chang, S. T., Liu, C. W., Maikap, S., & Lee, M. H. (2022). Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3661-3664). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019369

Liao, C. Y. ; Lou, Z. F. ; Lin, C. Y. et al. / Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs : Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{ba07028cdeb34c59b5da7c1764129ff8,

title = "Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM",

abstract = "Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.",

author = "Liao, \{C. Y.\} and Lou, \{Z. F.\} and Lin, \{C. Y.\} and A. Senapati and R. Karmakar and Hsiang, \{K. Y.\} and Li, \{Z. X.\} and Ray, \{W. C.\} and Lee, \{J. Y.\} and Chen, \{P. H.\} and Chang, \{F. S.\} and Tseng, \{H. H.\} and Wang, \{C. C.\} and Tsai, \{J. H.\} and Tang, \{Y. T.\} and Chang, \{S. T.\} and Liu, \{C. W.\} and S. Maikap and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019369",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3661--3664",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美国",

}

Liao, CY, Lou, ZF, Lin, CY, Senapati, A, Karmakar, R, Hsiang, KY, Li, ZX, Ray, WC, Lee, JY, Chen, PH, Chang, FS, Tseng, HH, Wang, CC, Tsai, JH, Tang, YT, Chang, ST, Liu, CW, Maikap, S & Lee, MH 2022, Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 3661-3664, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 03/12/22. https://doi.org/10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. / Liao, C. Y.; Lou, Z. F.; Lin, C. Y. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs

T2 - 2022 International Electron Devices Meeting, IEDM 2022

AU - Liao, C. Y.

AU - Lou, Z. F.

AU - Lin, C. Y.

AU - Senapati, A.

AU - Karmakar, R.

AU - Hsiang, K. Y.

AU - Li, Z. X.

AU - Ray, W. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Chang, F. S.

AU - Tseng, H. H.

AU - Wang, C. C.

AU - Tsai, J. H.

AU - Tang, Y. T.

AU - Chang, S. T.

AU - Liu, C. W.

AU - Maikap, S.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

N2 - Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

AB - Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

UR - https://www.scopus.com/pages/publications/85147526302

U2 - 10.1109/IEDM45625.2022.10019369

DO - 10.1109/IEDM45625.2022.10019369

M3 - 会议稿件

AN - SCOPUS:85147526302

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3661

EP - 3664

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 3 December 2022 through 7 December 2022

ER -

Liao CY, Lou ZF, Lin CY, Senapati A, Karmakar R, Hsiang KY et al. Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3661-3664. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019369